This guide provides a reference design for a single-ended op-amp circuit using the SKY130 PDK, intended to function as a non-inverting unity-gain buffer for low-frequency analog signals (1–10 kHz).
The following figures show the schematic of the circuit and the layout in Klayout.
| Parameter | Value |
|---|---|
| Supply voltage (vdd) | 1.7 V - 1.9 V |
| Nominal input common-mode voltage | (vdd/2 - 0.2V) - (vdd/2 + 0.2V) |
| Output load |
25pF (capacitive) |
| Temperature range | 20° C - 50° C |
| Input signal amplitude |
|
| Input signal frequency | 1 - 10 kHz |
| Input bias current | 5 |
| Open-loop low-freq (DC) Gain |
|
| Gain bandwidth product GBW |
|
| Phase margin PM | |
| Quiescent current |
|
| Input offset |
|
| Slew rate SR (open-loop & closed-loop) |
|
| Disable current |
|
| Final layout area | within 140 |
A detailed explanation of technology parameters can be found here: https://skywater-pdk.readthedocs.io/en/main/index.html
| Parameter | nMOS | pMOS |
|---|---|---|
|
|
0.49439 | -1.0652 |
| 301.97 | 24.424 | |
|
|
4.148 | 4.23 |
where
We also have
For the pMOS:
According to the specifications set above, we will have to design the operational amplifier with two stages to achieve the set gain and GBW requirements. Hence, we can initiate our design with a general structure of a two-stage Op-amp and derive the device specific parameters for our custom design.
More specifically, we need to calculate the W/L ratios of all the transistors, miller capacitor value and the currents in each branch.
There are several Rules of thumb which we can use as starting points along with the equations for calculating different parameters (derivations of these equations can be found from textbooks).
-
$C_{miller}$ $\geq 0.22$ $C_{load}$ for phase margin to be greater than 60. -
$V_{D,sat}$ $\gt 100$ mV - W/L ratio of PMOS in the differential pair is roughly 2.5 times the W/L ratio of NMOS (this is not a hard rule!)
Using the first rule of thumb,
we can calculate
We can then calculate the minimum bias current sinking from the differential pair (
we can take
With this we can find
we can assume
With that know, we can calculate the W/L ratio for the two NMOS transistors in the differential pair.
Afterwards, we can calculate the W/L ratio of the to PMOS transistors of the differential pair using the relationship
Calculate the W/L ratio of M5 using the relation
Calculate the W/L ratios of M6 & M7 considering the current ratios in the two stages. Transconductance of M6 can be considered to be 10 times larger than that of M1 for a good gain. Transistor parameters of the transistors in the current mirror depends on the ratio of currents in each branch.
Following simulations are required to be performed to test if the design meet all the specifications:
- Operating point analysis (both cases when EN = 0 & 1)
- Transient analysis
- Open loop DC gain
- Phase margin & GBW
- Quiescent current
- Input offset
- Slew rate (open-loop & closed-loop)
- PVT variations (Stability and Corner Analysis)
- Monte-Carlo Simulations
Following figures shows the basic simulation testbenches for open-loop and closed-loop simulations seperately. Individual testbenches are derived from these for veryfying each parameter.

Figure 3: Closed-loop testbench
Following sub sections illustrates the simulation results for each key parameter.

Figure 4: Operating point when enabled

Figure 5: Operating point when disabled

Figure 5: transient analysis for a input sine wave

Figure 6: Open-loop DC gain with GBW and phase margin for input freq of 10kHz
The slewrate was plotted by giving a positive pulse and a negative pulse respectively to both open-loop and closed-loop scenarios and obtaining the derivative of

Figure 7: Open-loop slewrate for a positive pulse (9.08 V/us)

Figure 8: Open-loop slewrate for a negative pulse (1.3 V/us)

Figure 7: Closed-loop slewrate for a positive pulse (5.80 V/us)

Figure 8: Closed-loop slewrate for a negative pulse (1.3 V/us)
PVT variation simulations were performed to verify the proper functioning of the design for variations in process corners, supply voltage and temperature within given ranges. Below two plots illustrates the open-loop gain, phase margin and GBW results when tested for fast-fast (ff) and slow-slow (ss) corners under process variations. Other parameters were similarly tested and verified for all three variations.

Figure 9: Open-loop Gain for ff corners

Figure 10: Open-loop Gain for ss corners
Monte-Carlo Simulations yet to be updated.

